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Device and method for measuring the resistance of a sensor based on nanostructured semiconductor oxides in the range of the order of microwatts

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dc.contributor.author VERJBIŢKI, Valeri
dc.contributor.author LUPAN, Oleg
dc.contributor.author RAILEAN, Serghei
dc.date.accessioned 2023-12-04T12:23:54Z
dc.date.available 2023-12-04T12:23:54Z
dc.date.issued 2019
dc.identifier.citation VERJBIŢKI, Valeri, LUPAN, Oleg, RAILEAN, Serghei. Device and method for measuring the resistance of a sensor based on nanostructured semiconductor oxides in the range of the order of microwatts. In: The 23th international exhibition of inventions INVENTICA 2019, Iasi, Romania, 2019, p. 294. ISSN:1844-7880. en_US
dc.identifier.issn 1844-7880
dc.identifier.uri http://repository.utm.md/handle/5014/25154
dc.description Patent / patent application Nr. MD 1269 Y, 2018.07.31, BOPI nr. 7/2018. Domain: Gas detection systems. en_US
dc.description.abstract Dispozitivul include o sursă de tensiune de referință reglabilă conectată la ieșirea unui microcontroler și unită în serie cu senzorul cercetat și un rezistor de referință, punctul de legătură al căruia cu senzorul cercetat este conectat la intrarea microcontrolerului. Metoda constă în măsurarea tensiunii sursei de tensiune de referință, măsurarea căderii de tensiune pe rezistorul de referință,calcularea căderii de tensiune pe senzor.Se calculeazăvaloarea curentului care trece prin nanostructură, puterea aplicată pe nanostructure și se setează valoarea tensiunii de referință astfel, încât puterea să nu depășească valoarea maxim admisibilă en_US
dc.description.abstract The device comprises an adjustable reference voltage source connected to the output of a microcontroller and connected in series to the investigated nanostructured sensor and to the reference resistor,the connection point of which to the investigated sensor is connected to the input of the microcontroller. The method consists in: measuring the voltage of the reference voltage source, measuring the voltage drop across the reference resistor, calculating the voltage drop across the investigated nanostructure.Current flowing through the nanostructure and the applied power to the nanostructure are calculated and it is set the value of the reference voltage so that the electrical power will not exceed the maximum permitted value. en_US
dc.language.iso en en_US
dc.publisher Technical University "Gheorghe Asachi" of Iași en_US
dc.rights Attribution-NonCommercial-NoDerivs 3.0 United States *
dc.rights.uri http://creativecommons.org/licenses/by-nc-nd/3.0/us/ *
dc.subject sursă de tensiune en_US
dc.subject senzor en_US
dc.subject rezistor en_US
dc.subject adjustable reference voltage source en_US
dc.subject microcontroller en_US
dc.subject sensor en_US
dc.title Device and method for measuring the resistance of a sensor based on nanostructured semiconductor oxides in the range of the order of microwatts en_US
dc.type Article en_US


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  • 2019
    The 23rd International Exhiibiitiion of Inventiions, 26th - 28th June, Iași, România

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Attribution-NonCommercial-NoDerivs 3.0 United States Except where otherwise noted, this item's license is described as Attribution-NonCommercial-NoDerivs 3.0 United States

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