Chemical Deposition of Photosensitive Media for Recording of the Optical Information

Abstract

Thin layers of amorphous chalcogenides semiconductors of mixed composition As2(SxSe1-x)3 for х in the interval 0 - 1 were obtained from chemical solutions of compounds arsenic selenide (As2Se3) and arsenic sulfide (As2S3). Research of the composition and optical properties of thin layers in the spectrum range of 0.3 - 3 μm of different compositions of the obtained layers had identified the compound of mixed composition As2(SxSe1-x)3. Ultraviolet irradiation of the samples leads to shift of their absorption edges to the infrared region.