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Chemical Deposition of Photosensitive Media for Recording of the Optical Information

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dc.contributor.author VERLAN, V. I.
dc.contributor.author BUZURNIUC, S. A.
dc.date.accessioned 2024-01-04T10:40:06Z
dc.date.available 2024-01-04T10:40:06Z
dc.date.issued 2009
dc.identifier.citation VERLAN, V. I., BUZURNIUC, S. A. Chemical Deposition of Photosensitive Media for Recording of the Optical Information. In: Microelectronics and Computer Science: proc. 6th International Conference, 1-3 Oct. 2009, Chişinău, Republica Moldova, vol. 1, 2009, pp. 19-21. ISBN 978-9975-45-045-4. ISBN 978-9975-45-122-2 (vol. 1). en_US
dc.identifier.isbn 978-9975-45-045-4
dc.identifier.isbn 978-9975-45-122-2
dc.identifier.uri http://repository.utm.md/handle/5014/25686
dc.description.abstract Thin layers of amorphous chalcogenides semiconductors of mixed composition As2(SxSe1-x)3 for х in the interval 0 - 1 were obtained from chemical solutions of compounds arsenic selenide (As2Se3) and arsenic sulfide (As2S3). Research of the composition and optical properties of thin layers in the spectrum range of 0.3 - 3 μm of different compositions of the obtained layers had identified the compound of mixed composition As2(SxSe1-x)3. Ultraviolet irradiation of the samples leads to shift of their absorption edges to the infrared region. en_US
dc.language.iso en en_US
dc.publisher Technical University of Moldova en_US
dc.relation.ispartof Proceeding of the 6th International Conference on "Microelectronics and Computer Science", oct.1-3, 2009, Chişinău, Moldova
dc.rights Attribution-NonCommercial-NoDerivs 3.0 United States *
dc.rights.uri http://creativecommons.org/licenses/by-nc-nd/3.0/us/ *
dc.subject thin layers en_US
dc.subject amorphous chalcogenides semiconductors en_US
dc.subject arsenic selenide en_US
dc.subject arsenic sulfide en_US
dc.title Chemical Deposition of Photosensitive Media for Recording of the Optical Information en_US
dc.type Article en_US


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