dc.contributor.author | VERLAN, V. I. | |
dc.contributor.author | BUZURNIUC, S. A. | |
dc.date.accessioned | 2024-01-04T10:40:06Z | |
dc.date.available | 2024-01-04T10:40:06Z | |
dc.date.issued | 2009 | |
dc.identifier.citation | VERLAN, V. I., BUZURNIUC, S. A. Chemical Deposition of Photosensitive Media for Recording of the Optical Information. In: Microelectronics and Computer Science: proc. 6th International Conference, 1-3 Oct. 2009, Chişinău, Republica Moldova, vol. 1, 2009, pp. 19-21. ISBN 978-9975-45-045-4. ISBN 978-9975-45-122-2 (vol. 1). | en_US |
dc.identifier.isbn | 978-9975-45-045-4 | |
dc.identifier.isbn | 978-9975-45-122-2 | |
dc.identifier.uri | http://repository.utm.md/handle/5014/25686 | |
dc.description.abstract | Thin layers of amorphous chalcogenides semiconductors of mixed composition As2(SxSe1-x)3 for х in the interval 0 - 1 were obtained from chemical solutions of compounds arsenic selenide (As2Se3) and arsenic sulfide (As2S3). Research of the composition and optical properties of thin layers in the spectrum range of 0.3 - 3 μm of different compositions of the obtained layers had identified the compound of mixed composition As2(SxSe1-x)3. Ultraviolet irradiation of the samples leads to shift of their absorption edges to the infrared region. | en_US |
dc.language.iso | en | en_US |
dc.publisher | Technical University of Moldova | en_US |
dc.relation.ispartof | Proceeding of the 6th International Conference on "Microelectronics and Computer Science", oct.1-3, 2009, Chişinău, Moldova | |
dc.rights | Attribution-NonCommercial-NoDerivs 3.0 United States | * |
dc.rights.uri | http://creativecommons.org/licenses/by-nc-nd/3.0/us/ | * |
dc.subject | thin layers | en_US |
dc.subject | amorphous chalcogenides semiconductors | en_US |
dc.subject | arsenic selenide | en_US |
dc.subject | arsenic sulfide | en_US |
dc.title | Chemical Deposition of Photosensitive Media for Recording of the Optical Information | en_US |
dc.type | Article | en_US |
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