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Chemical Method for the Gallium Arsenide Rectification Structure Divide into Crystals

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dc.contributor.author BARANOV, Simion
dc.contributor.author CINIC, Boris
dc.contributor.author DUDCA, Tudor
dc.contributor.author SUMAN, Victor
dc.date.accessioned 2024-01-04T10:59:08Z
dc.date.available 2024-01-04T10:59:08Z
dc.date.issued 2009
dc.identifier.citation BARANOV, Simion et al. Chemical Method for the Gallium Arsenide Rectification Structure Divide into Crystals. In: Microelectronics and Computer Science: proc. 6th International Conference, 1-3 Oct. 2009, Chişinău, Republica Moldova, vol. 1, 2009, pp. 22-24. ISBN 978-9975-45-045-4. ISBN 978-9975-45-122-2 (vol. 1). en_US
dc.identifier.isbn 978-9975-45-045-4
dc.identifier.isbn 978-9975-45-122-2
dc.identifier.uri http://repository.utm.md/handle/5014/25687
dc.description.abstract Thise investigations are referred to power semiconductor devices (PSD) area manufactured by gallium arsenide (GaAs) advanced technology. The work’s objective is excluding the break-down effect on the p-n junction surface of high voltage devices, which is advance progressed with diminishing the crystal dimensions in the dividing process of the semiconductor structures. We propose the method of the GaAs deep etching by a mixture utilizing concentrated acids as nitric and hydrochloric acids in equal rates. After 30 min of mixing up the solution formation is consorted of the endothermic reaction, bound up by nitrosyl chloride (NOCl) formation, which dissolves the GaAs decomposed product in solution by arsenic oxidation up to As(V), forming ortoarsenic acid and gallium chloride. This method is used for dividing semiconductor structure of GaAs with 0.4-0.6 mm of thickness in small dimensioned crystals. The advantages of this technology are the great speed of GaAs dissolving, low costs of manufacturing and profitableness. en_US
dc.language.iso en en_US
dc.publisher Technical University of Moldova en_US
dc.relation.ispartof Proceeding of the 6th International Conference on "Microelectronics and Computer Science", oct.1-3, 2009, Chişinău, Moldova
dc.rights Attribution-NonCommercial-NoDerivs 3.0 United States *
dc.rights.uri http://creativecommons.org/licenses/by-nc-nd/3.0/us/ *
dc.subject power semiconductor devices (PSD) en_US
dc.subject gallium arsenide en_US
dc.subject dissolution en_US
dc.subject chemical divide of the crystals structure en_US
dc.title Chemical Method for the Gallium Arsenide Rectification Structure Divide into Crystals en_US
dc.type Article en_US


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