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Porous morphologies in Si, III-V and II-VI compounds: a comparative study

Porous morphologies in Si, III-V and II-VI compounds: a comparative study

LANGA, S.; MONAICO, E.; FÖLL, H.; TIGINYANU, I.M.
URI: http://repository.utm.md/handle/5014/25702
Date: 2009

Abstract:

Porous morphologies obtained during the anodization of semiconductors are mainly determined by particular characteristics of the semiconductor-electrolyte interfaces and the bulk properties of the semiconductor itself. This paper discusses the types of porous structures obtained in Si, III-V and II-VI semiconductors: crystallographically oriented pores, current line oriented pores and fractal pores.

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