Porous morphologies in Si, III-V and II-VI compounds: a comparative study

LANGA, S.; MONAICO, E.; FÖLL, H.; TIGINYANU, I.M.

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dc.contributor.author	LANGA, S.
dc.contributor.author	MONAICO, E.
dc.contributor.author	FÖLL, H.
dc.contributor.author	TIGINYANU, I.M.
dc.date.accessioned	2024-01-04T12:18:38Z
dc.date.available	2024-01-04T12:18:38Z
dc.date.issued	2009
dc.identifier.citation	LANGA, S., MONAICO, E., FÖLL, H., TIGINYANU, I.M. Porous morphologies in Si, III-V and II-VI compounds: a comparative study. In: Microelectronics and Computer Science: proc. 6th International Conference, 1-3 Oct. 2009, Chişinău, Republica Moldova, vol. 1, 2009, pp. 175-179. ISBN 978-9975-45-045-4. ISBN 978-9975-45-122-2 (vol. 1).	en_US
dc.identifier.isbn	978-9975-45-045-4
dc.identifier.isbn	978-9975-45-122-2
dc.identifier.uri	http://repository.utm.md/handle/5014/25702
dc.description.abstract	Porous morphologies obtained during the anodization of semiconductors are mainly determined by particular characteristics of the semiconductor-electrolyte interfaces and the bulk properties of the semiconductor itself. This paper discusses the types of porous structures obtained in Si, III-V and II-VI semiconductors: crystallographically oriented pores, current line oriented pores and fractal pores.	en_US
dc.language.iso	en	en_US
dc.publisher	Technical University of Moldova	en_US
dc.relation.ispartof	Proceeding of the 6th International Conference on "Microelectronics and Computer Science", oct.1-3, 2009, Chişinău, Moldova
dc.rights	Attribution-NonCommercial-NoDerivs 3.0 United States	*
dc.rights.uri	http://creativecommons.org/licenses/by-nc-nd/3.0/us/	*
dc.subject	porous morphologies	en_US
dc.subject	semiconductors	en_US
dc.subject	nanostructuring	en_US
dc.title	Porous morphologies in Si, III-V and II-VI compounds: a comparative study	en_US
dc.type	Article	en_US