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Electrical behavior of the CdTe heterojunction cells fabricated on polyimide substrates

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dc.contributor.author POTLOG, Tamara
dc.contributor.author SPALATU, Nicolaie
dc.date.accessioned 2024-01-05T07:33:44Z
dc.date.available 2024-01-05T07:33:44Z
dc.date.issued 2009
dc.identifier.citation POTLOG, Tamara, SPALATU, Nicolaie. Electrical behavior of the CdTe heterojunction cells fabricated on polyimide substrates. In: Microelectronics and Computer Science: proc. 6th International Conference, 1-3 Oct. 2009, Chişinău, Republica Moldova, vol. 1, 2009, pp. 47-50. ISBN 978-9975-45-045-4. ISBN 978-9975-45-122-2 (vol. 1). en_US
dc.identifier.isbn 978-9975-45-045-4
dc.identifier.isbn 978-9975-45-122-2
dc.identifier.uri http://repository.utm.md/handle/5014/25716
dc.description.abstract Hot-wall technique has been used for preparation of CdTe heterojunction cells on the polyimide substrates covered with ITO layer. Carrier transport mechanisms of the heterojunction cells are briefly discussed. It has been established that tuneling recombination current flows through states near or at the interface with a thermal activation energy 0,34 eV; 0,33 eV; 0, 34 eV; for applied bias voltages 0,1V; 0,2 V and 0,3 V; respectively. The reverse current is limited by the carrier generation process. en_US
dc.language.iso en en_US
dc.publisher Technical University of Moldova en_US
dc.relation.ispartof Proceeding of the 6th International Conference on "Microelectronics and Computer Science", oct.1-3, 2009, Chişinău, Moldova
dc.rights Attribution-NonCommercial-NoDerivs 3.0 United States *
dc.rights.uri http://creativecommons.org/licenses/by-nc-nd/3.0/us/ *
dc.subject polyimide substrates en_US
dc.subject heterojunction cells en_US
dc.title Electrical behavior of the CdTe heterojunction cells fabricated on polyimide substrates en_US
dc.type Article en_US


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