Structura spectrelor de iradiere a politipului 2 4 ZnIn S la 80 K

Abstract

In this article on the describe structure spectrum of radiation polities of 2 4 ZnIn S at 80 K relative thickness of plaque. Is proposed the optical transition energy for recombination holder with unbalanced load levels specifically determined experimentally (0,11 and 0,25 eV de la Ev). On the basis of the results are interpreted.