Generalized hyperbolic model for I-V characteristic of semiconductor devices

Abstract

It is proposed to use the models of volt-ampere characteristics of semiconductor devices such as transistors and photovoltaic cells as a physically reasonable hyperbolic characteristic of the active two-pole with self-limitation of current. In this case, analytical calculation load regime is possible, which is important for the calculations in real time. This approach also allows determining the point of the characteristic regimes, comparing the effectiveness of current regimes.