Analytical modeling of energy quantization effects in MOSFETs

CHAUDHRY, Amit; ROY, J. N.

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dc.contributor.author	CHAUDHRY, Amit
dc.contributor.author	ROY, J. N.
dc.date.accessioned	2024-01-09T07:55:42Z
dc.date.available	2024-01-09T07:55:42Z
dc.date.issued	2009
dc.identifier.citation	CHAUDHRY, Amit, ROY, J. N. Analytical modeling of energy quantization effects in MOSFETs. In: Microelectronics and Computer Science: proc. 6th International Conference, 1-3 Oct. 2009, Chişinău, Republica Moldova, vol. 1, 2009, pp. 107-110. ISBN 978-9975-45-045-4. ISBN 978-9975-45-122-2 (vol. 1).	en_US
dc.identifier.isbn	978-9975-45-045-4
dc.identifier.isbn	978-9975-45-122-2
dc.identifier.uri	http://repository.utm.md/handle/5014/25734
dc.description.abstract	In this paper an analytical model has been developed to study the Energy Quantization Effects occurring in the MOSFETs (Metal Oxide Semiconductor Field Effect Oxide) under various conditions. These effects have resulted in a reduction in drain current and degradation of gate capacitance.	en_US
dc.language.iso	en	en_US
dc.publisher	Technical University of Moldova	en_US
dc.relation.ispartof	Proceeding of the 6th International Conference on "Microelectronics and Computer Science", oct.1-3, 2009, Chişinău, Moldova
dc.rights	Attribution-NonCommercial-NoDerivs 3.0 United States	*
dc.rights.uri	http://creativecommons.org/licenses/by-nc-nd/3.0/us/	*
dc.subject	metal oxide semiconductor field effect oxide (MOSFET)	en_US
dc.subject	energy quantization	en_US
dc.subject	drain-induced barrier lowering (DIBL)	en_US
dc.title	Analytical modeling of energy quantization effects in MOSFETs	en_US
dc.type	Article	en_US