Abstract:
TIGaSe2 semiconductors crystallize as a layered structure and have monoclinic lattice. One of the features of these crystals is a strong anisotropy of physical characteristics due to the specificity of the crystal structure. The influence of temperature and pressure on the optical spectra near the absorption edge in TlGaS2 crystals were studied. It was investigated the Raman scattering at different geometries and temperatures (from 77 to 400 K).