Technology of oriented growth of anisotropic single-crystal Bi films in a strong electric field

Abstract

The invention relates to the field of materials science and nanotechnology, and more precisely to the possibilities of obtaining single-crystal Bi films with predetermined parameters. The objective of the invention is to develop a technology for recrystallization of thin Bi films with the final aim to obtain the necessary orientation of the main crystallographic axis C3 of the film. The proposed method is based on our patent on the recrystallization of a glass-coated bismuth microwire in a strong electric field (Patent No.MD 1409 Y 2019.12.31).