The method of oriented growth of single crystals in anisotropic glass-insulated microwires (for example, Bi and Bi-Sn alloys) in a strong electric field

Abstract

The invention relates to the field of materials science and nanotechnology, but more specifically to the possibilities of obtaining a monocrystalline microwire in glass envelope with an arbitrary length and predetermined parameters. The object of the invention is to develop the technology of recrystallization of the microwire in the glass envelope with the final aim to obtain the necessary orientation of the main crystallographic axis C3 in the microwire.