Procedures for obtaining of semiconductors based on GaN:Mg

Abstract

The process according to the invention consists in obtaining GaN nanoparticles and nanoparticles with pconductivity by means of chemical reactions of a chemical compound used as the source of gallium atoms and magnesium acetate Mg (CH3COO)2, or acetate tetrahydrate of magnesium (CH3COO)2 * 4H2O – as a source of magnesium atoms in the hydrothermal process, at the same time the concentration of the doping element being of (0.4-2.0)% wt.