Excitonic states in layered semiconductor single crystals

Abstract

Optical properties of GaSe single crystals were investigated by measuring of reflection, transmission and photoluminescence spectra in wide temperature diapason 10 – 300 K. The parameters of three excitonic series for С1-V1, C2-V1 and С3-V1 bands were determined [2]. Layered SnSe demonstrate presence of A, B, C and D excitonic series in the minimum of interband interval. By analysis of low temperature reflection spectra of the excitons parameters (Rydberg constant, tramnslaiton and reduced effective masses) were determined. The effective masses of electrons and holes forming these excitons were also determined.