Abstract:
The effect of vacuum heat treatment of CuO films obtained using RF magnetron sputtering at a pressure of 10-5 Pa for further use in CuO/ZnO and CuO/TiO2 heterojunctions was studied. A 99.95% pure Cu wafer with a diameter of 50 mm and a thickness of 2 mm was used as a target. The sapphire supports used had a dimension of 20 × 20 mm. The pressure in the chamber was 5.4 x 10–5 Pa, and the target–support distance was 80 mm. The temperature of the holder was kept constant at 500oC, and the O2/Ar ratio in the gas flow was 3 : 5, respectively. Film deposition took place under the following conditions: a pressure of 7.4 × 10–3 Pa, a magnetron power of 80 W, and a condensation rate of 5 nm/min.