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Synthesis and properties of β-Ga2O3 nanowires and nanosheets on doped GaS:Mn substrates

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dc.contributor.author SPRINCEAN, Veaceslav
dc.contributor.author QIU, Haoyi
dc.contributor.author LUPAN, Oleg
dc.contributor.author TJARDTS, Tim
dc.contributor.author PETERSEN, Deik
dc.contributor.author VEZIROGLU, Salih
dc.contributor.author ADELUNG, Rainer
dc.contributor.author CARAMAN, Mihail
dc.date.accessioned 2024-06-14T06:13:59Z
dc.date.available 2024-06-14T06:13:59Z
dc.date.issued 2024
dc.identifier.citation SPRINCEAN, Veaceslav et al. Synthesis and properties of β-Ga2O3 nanowires and nanosheets on doped GaS:Mn substrates. In: Materials Science in Semiconductor Processing, 2024, vol. 172, p. 108040. e-ISSN 1369-8001. en_US
dc.identifier.issn 1369-8001
dc.identifier.uri https://doi.org/10.1016/j.mssp.2023.108040
dc.identifier.uri http://repository.utm.md/handle/5014/27392
dc.description Acces full text - https://doi.org/10.1016/j.mssp.2023.108040 en_US
dc.description.abstract In this work, the synthesis, morphology, optical and luminescence properties of Mn-doped β-Ga2O3 (Ga2O3:Mn) nanowires/nanosheets on Mn-doped GaS (GaS:Mn) substrate are studied. The aim was to obtain structures of semiconductors with layers of nanoformations (nanowires, nanosheets) from a wide energy band semiconductor such as β-Ga2O3 and to determine their characteristic properties. For the base material, Mn-doped GaS lamellae were chosen, which are optically transparent in the spectral region where the optical properties of Mn2+ and Mn3+ ions are manifested. Through thermal annealing, single-crystalline β-GaS plates doped with 1.3 atomic percent (at.%) of manganese (Mn) are exposed to an atmosphere enriched with H2O vapor at a temperature of 800 °C for 6 h. As a result, the surface of these plates is covered with a composite layer consisting of crystallites of α-Ga2S3:Mn and β-GaS:Mn planar junctions. This composite exhibits a direct band gap of 2.88 eV and an indirect band gap of 2.55 eV corresponding to the β-GaS:Mn crystallites. Upon further increasing the temperature during thermal annealing to 850 °C and 920 °C, the surface of the β-GaS:Mn samples transform into a layer of β-Ga2O3:Mn nanowires/nanosheets with a band gap of 4.5 eV. Its intense green-orange photoluminescence is caused by electronic transitions within the Mn2+ ion. en_US
dc.language.iso en en_US
dc.publisher Elsevier en_US
dc.relation.ispartofseries Materials Science in Semiconductor Processing;2024, vol. 172
dc.rights Attribution-NonCommercial-NoDerivs 3.0 United States *
dc.rights.uri http://creativecommons.org/licenses/by-nc-nd/3.0/us/ *
dc.subject gallium oxide en_US
dc.subject gallium sulfide en_US
dc.subject manganese en_US
dc.subject doping nanowires en_US
dc.subject doping nanosheets en_US
dc.subject nanoformations en_US
dc.title Synthesis and properties of β-Ga2O3 nanowires and nanosheets on doped GaS:Mn substrates en_US
dc.type Article en_US


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