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Composition and Surface Optical Properties of GaSe:Eu Crystals before and after Heat Treatment

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dc.contributor.author SPRINCEAN, Veaceslav
dc.contributor.author QIU, Haoyi
dc.contributor.author TJARDTS, Tim
dc.contributor.author LUPAN, Oleg
dc.contributor.author UNTILĂ, Dumitru
dc.contributor.author AKTAS, Cenk
dc.contributor.author ADELUNG, Rainer
dc.contributor.author LEONTIE, Liviu
dc.contributor.author CARLESCU, Aurelian
dc.contributor.author GURLUI, Silviu
dc.contributor.author CARAMAN, Mihail
dc.date.accessioned 2024-06-14T07:47:44Z
dc.date.available 2024-06-14T07:47:44Z
dc.date.issued 2024
dc.identifier.citation SPRINCEAN, Veaceslav et al. Composition and Surface Optical Properties of GaSe:Eu Crystals before and after Heat Treatment. In: Materials, 2024, vol. 17, art. nr. 405. ISSN 1996-1944. en_US
dc.identifier.issn 1996-1944
dc.identifier.uri https://doi.org/10.3390/ma17020405
dc.identifier.uri http://repository.utm.md/handle/5014/27395
dc.description Acces full text - https://doi.org/10.3390/ma17020405 en_US
dc.description.abstract This work studies the technological preparation conditions, morphology, structural characteristics and elemental composition, and optical and photoluminescent properties of GaSe single crystals and Eu-doped b–Ga2O3 nanoformations on #–GaSe:Eu single crystal substrate, obtained by heat treatment at 750–900 ◦C, with a duration from 30 min to 12 h, in water vapor-enriched atmosphere, of GaSe plates doped with 0.02–3.00 at. % Eu. The defects on the (0001) surface of GaSe:Eu plates serve as nucleation centers of b–Ga2O3:Eu crystallites. For 0.02 at. % Eu doping, the fundamental absorption edge of GaSe:Eu crystals at room temperature is formed by n = 1 direct excitons, while at 3.00 at. % doping, Eu completely shields the electron–hole bonds. The band gap of nanostructured b–Ga2O3:Eu layer, determined from diffuse reflectance spectra, depends on the dopant concentration and ranges from 4.64 eV to 4.87 eV, for 3.00 and 0.05 at. % doping, respectively. At 0.02 at. % doping level, the PL spectrum of #–GaSe:Eu single crystals consists of the n = 1 exciton band, together with the impurity band with a maximum intensity at 800 nm. Fabry–Perrot cavities with a width of 9.3 μm are formed in these single crystals, which determine the interference structure of the impurity PL band. At 1.00–3.00 at. % Eu concentrations, the PL spectra of GaSe:Eu single crystals and b–Ga2O3:Eu nanowire/nanolamellae layers are determined by electronic transitions of Eu2+ and Eu3+ ions. en_US
dc.language.iso en en_US
dc.publisher MDPI (Basel, Switzerland) en_US
dc.relation.ispartofseries Materials;2024, vol. 17
dc.rights Attribution-NonCommercial-NoDerivs 3.0 United States *
dc.rights.uri http://creativecommons.org/licenses/by-nc-nd/3.0/us/ *
dc.subject chalcogenides en_US
dc.subject gallium trioxide en_US
dc.subject native oxide en_US
dc.subject single crystals en_US
dc.subject layers en_US
dc.subject optical properties en_US
dc.subject photoluminescence en_US
dc.title Composition and Surface Optical Properties of GaSe:Eu Crystals before and after Heat Treatment en_US
dc.type Article en_US


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