Abstract:
The self-catalyzed growth of InP nanowires on an aerographite substrate is demonstrated in this study by using high growth rate hydride vapor-phase epitaxy technology. Nanowires with aspect ratios higher than 200 and diameters of 0.2–2 μm were analyzed by scanning electron microscopy, transmission electron microscopy, energy-dispersive x-ray analysis, Raman spectroscopy, and photoelectrical characterization. The nanowires were found to be of constant diameter over their length, except for a well-faceted hexagonal tapered end. The novel growth process results in formation of self-catalyzed nanowires compatible with integrated circuit technology. Single-wire InP photodetectors with predominant sensitivity in the infrared spectral range have been prepared and characterized.