dc.contributor.author | SPRINCEAN, Veaceslav | |
dc.contributor.author | QIU, Haoyi | |
dc.contributor.author | LUPAN, Oleg | |
dc.contributor.author | TJARDTS, Tim | |
dc.contributor.author | PETERSEN, Deik | |
dc.contributor.author | VEZIROGLU, Salih | |
dc.contributor.author | ADELUNG, Rainer | |
dc.contributor.author | CARAMAN, Mihail | |
dc.date.accessioned | 2024-07-03T08:55:11Z | |
dc.date.available | 2024-07-03T08:55:11Z | |
dc.date.issued | 2024 | |
dc.identifier.citation | SPRINCEAN, Veaceslav et al. Synthesis and properties of β-Ga2O3 nanowires and nanosheets on doped GaS:Mn substrates. In: Materials Science in Semiconductor Processing, 2024, vol. 172, p. 108040. ISSN 1369-8001. | en_US |
dc.identifier.issn | 1369-8001 | |
dc.identifier.uri | https://doi.org/10.1016/j.mssp.2023.108040 | |
dc.identifier.uri | http://repository.utm.md/handle/5014/27745 | |
dc.description | Acess full text: https://doi.org/10.1016/j.mssp.2023.108040 | en_US |
dc.description.abstract | In this work, the synthesis, morphology, optical and luminescence properties of Mn-doped β-Ga2O3 (Ga2O3:Mn) nanowires/nanosheets on Mn-doped GaS (GaS:Mn) substrate are studied. The aim was to obtain structures of semiconductors with layers of nanoformations (nanowires, nanosheets) from a wide energy band semiconductor such as β-Ga2O3 and to determine their characteristic properties. For the base material, Mn-doped GaS lamellae were chosen, which are optically transparent in the spectral region where the optical properties of Mn2+ and Mn3+ ions are manifested. Through thermal annealing, single-crystalline β-GaS plates doped with 1.3 atomic percent (at.%) of manganese (Mn) are exposed to an atmosphere enriched with H2O vapor at a temperature of 800 ◦C for 6 h. As a result, the surface of these plates is covered with a composite layer consisting of crystallites of α-Ga2S3:Mn and β-GaS:Mn planar junctions. This composite exhibits a direct band gap of 2.88 eV and an indirect band gap of 2.55 eV corresponding to the β-GaS:Mn crystallites. Upon further increasing the temperature during thermal annealing to 850 ◦C and 920 ◦C, the surface of the β-GaS:Mn samples transform into a layer of β-Ga2O3: Mn nanowires/nanosheets with a band gap of 4.5 eV. Its intense green-orange photoluminescence is caused by electronic transitions within the Mn2+ ion. | en_US |
dc.language.iso | en | en_US |
dc.publisher | Elsevier | en_US |
dc.relation.ispartofseries | Materials Science in Semiconductor Processing;2024, vol. 172 | |
dc.rights | Attribution-NonCommercial-NoDerivs 3.0 United States | * |
dc.rights.uri | http://creativecommons.org/licenses/by-nc-nd/3.0/us/ | * |
dc.subject | gallium oxide | en_US |
dc.subject | gallium sulfide | en_US |
dc.subject | manganese | en_US |
dc.subject | nanowires | en_US |
dc.subject | nanosheets | en_US |
dc.title | Synthesis and properties of β-Ga2O3 nanowires and nanosheets on doped GaS:Mn substrates | en_US |
dc.type | Article | en_US |
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