Surface excitations in nanocomposites based on porous III-V semiconductors

Abstract

In this work, we investigated porous layers obtained by electrochemical etching of n-type GaAs, InP, and GaP single crystals. Electrochemical etching techniques provide wide possibilities for formation layers with different morphology, in particular quasi-ordered array of pore with possibility to control pore shape and size. Far-infrared spectral region is very attractive for the characterization of porous polar semiconductors because, unlike well-studied por-Si for polar semiconductor compounds, the specific region of the Reststrahlen band and also mixed plasmon-phonon mode in doped materials exist. For our samples, we investigated specular reflection that is traditionally enough and attenuated total reflection (ATR) in Otto geometry, with consideration of phonon and plasmon-phonon surface polariton excitation.