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Эффект ШдГ и термоэлектрические свойства нитей Bi, легированных акцепторной примесью Sn

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dc.contributor.author НИКОЛАЕВА, А. А.
dc.contributor.author КОНОПКО, Л. А.
dc.contributor.author БОДЮЛ, П. П.
dc.contributor.author ПАРА, Г. И.
dc.contributor.author БОТНАРЬ, О. В.
dc.date.accessioned 2019-07-16T11:58:57Z
dc.date.available 2019-07-16T11:58:57Z
dc.date.issued 2015
dc.identifier.citation НИКОЛАЕВА, А. А., КОНОПКО, Л. А. БОДЮЛ, П. П. et al. Эффект ШдГ и термоэлектрические свойства нитей Bi, легированных акцепторной примесью Sn. In: Telecomunicaţii, Electronică şi Informatică: proc. of the 5th intern. conf., May 20-23, 2015. Chişinău, 2015, pp. 277-281. ISBN 978-9975-45-377-6. en_US
dc.identifier.isbn 978-9975-45-377-6
dc.identifier.uri http://repository.utm.md/handle/5014/3557
dc.description.abstract The influence of the acceptor impurity Sn on the manifestation of size effects in magnetoresistance, and thermopower of single-crystal Bi wires in a glass cover prepared the liquid phase casting with diameters ranging from 100 nm to 1 micron are presented. From the observed Shubnikov de Haas (SdH) oscillations the position of the Fermi level and carrier concentration was calculated. Power factor (Pf) depending on the dopant Sn, temperature and diameter of the wires was determined experimentally. en_US
dc.language.iso ru en_US
dc.publisher Technical University of Moldova en_US
dc.rights Attribution-NonCommercial-NoDerivs 3.0 United States *
dc.rights.uri http://creativecommons.org/licenses/by-nc-nd/3.0/us/ *
dc.subject thermoelectricity en_US
dc.subject Bi threads en_US
dc.subject doping en_US
dc.subject Shubnikov de Haas oscillations en_US
dc.subject termoelectricitate en_US
dc.subject fire Bi en_US
dc.subject dopare en_US
dc.subject oscilații Shubnikov de Haas en_US
dc.subject термоэлектричество en_US
dc.subject нити Bi en_US
dc.subject легирование en_US
dc.subject осцилляции Шубникова де Гааза en_US
dc.title Эффект ШдГ и термоэлектрические свойства нитей Bi, легированных акцепторной примесью Sn en_US
dc.type Article en_US


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