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Browsing Conferinţa ICNBME - International Conference on Nanotechnologies and Biomedical Engineering by Subject "luminescence"

Browsing Conferinţa ICNBME - International Conference on Nanotechnologies and Biomedical Engineering by Subject "luminescence"

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  • ARAMA, E.; PÎNTEA, V.; SHEMYAKOVA, T. (Universitatea Tehnică a Moldovei, 2021)
    Zinc thioindate and gallium thiogallate single crystals were grown by a chemical vapor transport method. The cathodoluminescence and X-ray luminescence spectra of ZnIn2S4 and CdGa2S4 single crystals were studied. From ...
  • RUSU, E.; URSAKI, V.; GUTUL, T.; VLAZAN, P.; SIMINEL, A. (Tehnica UTM, 2015)
    ZnO and TiO2 nanoparticles as well as ZnO/TiO2 core/shell structures have been prepared by hydrothermal method and characterized by means of scanning electron microscopy, XRD and EDX analysis, FTIR and luminescence ...
  • KAPON, Eli; MEREUŢA, Alexandru; DOROGAN, Andrei; DRAGUTAN, Nicolae; VIERU, Tatiana (Technical University of Moldova, 2011)
    Radiation maxima were observed in photoluminescence spectra of GaAs/ In0.3 Ga0.7As/ GaAs in case of 632.8nm and 532nm He-Ne laser excitation conditioned by the recombination from ground (e1-hh1, e1-lh1) and excited (e2-hh2, ...
  • BRANISTE, T.; POPA, V.; MARTIN, D.; CARLIN, J.-F.; URSAKI, V.; GRANDJEAN, N.; TIGINYANU, I. (Tehnica UTM, 2015)
    In this paper, we show that the quality of the porous layers produced by photoelectrochemical (PEC) etching of HVPE GaN in oxalic acid is better than that of the initial material, and the quality of GaN films overgrown on ...
  • VERLAN, V. I.; CULEAC, I. P.; BORDIAN, O.; ZUBAREVA, V. E.; BULHAC, I.; IOVU, M. S.; ENACHESCU, M.; SIMINEL, N. A.; NEDELEA, V. V. (Tehnica UTM, 2019)
    The paper presents experimental results on a novel Eu3+ dinuclear coordination compound [Eu(µ2-OC2H5)(NO)3(phen)]2•phen with high emission quantum yield. The complex has been characterized by photoluminescence (PL) ...
  • RUSU, Emil; GHIŢU, Irina; PRILEPOV, Vladimir; ZALAMAI, Victor; URSAKI, Veaceslav (Technical University of Moldova, 2011)
    We show that the morphology and the luminescence properties of ZnO layers produced by magnetron sputtering can be controlled by technological parameters of sputtering, particularly by the ratio of argon to oxygen gases in ...
  • TIGINYANU, Ion (Technical University of Moldova, 2015)
    Gallium Nitride (GaN) is a wide-band-gap semiconductor compound (Eg = 3.4 eV at 300 K) which over the last decades played a major role in the development of modern solid-state lighting industry. An intensive investigation ...
  • NAZAROV, Mihail (Tehnica UTM, 2013)
    For the purpose of development of highly energy-efficient light sources, one needs to design highly efficient green, red and yellow phosphors, which are able to absorb excitation energy and generate emissions. Using double ...
  • ENACHI, Mihai; URSAKI, Veaceslav; SERGENTU, Vladimir (Technical University of Moldova, 2011)
    We show that coating of titania nanotubes by Ag layers with thickness of 5 – 20 nm leads to the increase of the near-bandgap photoluminescence intensity by one order of magnitude, while the effect of Au coatings is ...

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