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Comparative study of porosification in InAs, InP, ZnSe and ZnCdS

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dc.contributor.author MONAICO, Eduard
dc.contributor.author TIGINYANU, Ion
dc.contributor.author NIELSCH, Kornelius
dc.contributor.author URSAKI, Veaceslav
dc.contributor.author COLIBABA, Gleb
dc.contributor.author NEDEOGLO, Dmitrii
dc.contributor.author COJOCARU, Ala
dc.contributor.author FÖLL, Helmut
dc.date.accessioned 2019-10-03T13:22:17Z
dc.date.available 2019-10-03T13:22:17Z
dc.date.issued 2013
dc.identifier.citation MONAICO, Eduard, TIGINYANU, Ion, NIELSCH, Kornelius et al. Comparative study of porosification in InAs, InP, ZnSe and ZnCdS. In: ICNBME-2013. International Conference on Nanotechnologies and Biomedical Engineering. German-Moldovan Workshop on Novel Nanomaterials for Electronic, Photonic and Biomedical Applications: proc. of the 2th intern. conf., April 18-20, 2013. Chişinău, 2013, pp. 51-55. ISBN 978-9975-62-343-8. en_US
dc.identifier.isbn 978-9975-62-343-
dc.identifier.uri http://repository.utm.md/handle/5014/4606
dc.description.abstract We report on a comparative study of the pore growth during anodization of a narrow-bandgap III-V compound (InAs), a medium-bandgap III-V one (InP) and wide-bandgap II-VI semiconductors (ZnSe and Zn0,4Cd0,6S). According to the obtained results, the morphology of the porous layers can be controlled by the composition of the electrolyte and the applied electrochemical parameters. It was evidenced that in the narrow bandgap semiconductor InAs it is difficult to control the mechanism of pore growth. Both currentline oriented pores and crystallographically oriented pores were produced in the medium-bandgap material InP. The electrochemical nanostructuring of wide-bandgap semiconductors realized in single crystalline highconductivity samples evidenced only current-line oriented pores. This behavior is explained in terms of difference in the values of electronegativity of the constituent atoms and the degree of ionicity. en_US
dc.language.iso en en_US
dc.publisher Technical University of Moldova en_US
dc.rights Attribution-NonCommercial-NoDerivs 3.0 United States *
dc.rights.uri http://creativecommons.org/licenses/by-nc-nd/3.0/us/ *
dc.subject anodization en_US
dc.subject oriented pores en_US
dc.subject ionicity en_US
dc.subject porous layers en_US
dc.subject anodizare en_US
dc.subject pori orientați en_US
dc.subject ionicitate en_US
dc.subject straturi poroase en_US
dc.title Comparative study of porosification in InAs, InP, ZnSe and ZnCdS en_US
dc.type Article en_US


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