Development of Conductive Nanotemplates on ZnSe

Abstract

We demonstrate the possibility to fabricate arrays of pores oriented perpendicular and parallel to the top surface of the ZnSe nanotemplate. The control of material conductivity allows one to produce porous ZnSe samples with the mean pore diameter and characteristic skeleton wall thickness from several hundreds of nanometers to about 15 nm. In addition, electrochemical treatment of ZnSe single crystals using photoresist masks allows one to prepare buried porous structures with pores directed parallel to the top template surface, which is especially important for photonic applications.