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| dc.contributor.author | KAPON, Eli | |
| dc.contributor.author | MEREUŢA, Alexandru | |
| dc.contributor.author | DOROGAN, Andrei | |
| dc.contributor.author | DRAGUTAN, Nicolae | |
| dc.contributor.author | VIERU, Tatiana | |
| dc.date.accessioned | 2019-10-15T07:35:50Z | |
| dc.date.available | 2019-10-15T07:35:50Z | |
| dc.date.issued | 2011 | |
| dc.identifier.citation | KAPON, Eli, MEREUŢA, Alexandru, DOROGAN, Andrei et al. Exciton Luminescence in In0.3Ga0.7As/GaAs Quantum Well Heterostructures. In: ICNBME-2011. International conference on Nanotechnologies and Biomedical Engineering. German-moldovan workshop on Novel Nanomaterials for Electronic, Photonic and Biomedical Applications: proc. of the intern. conf., July 7-8, 2011. Chişinău, 2011, pp. 83-85. ISBN 978-9975-66-239-0. | en_US |
| dc.identifier.isbn | 978-9975-66-239-0 | |
| dc.identifier.uri | http://repository.utm.md/handle/5014/4675 | |
| dc.description.abstract | Radiation maxima were observed in photoluminescence spectra of GaAs/ In0.3 Ga0.7As/ GaAs in case of 632.8nm and 532nm He-Ne laser excitation conditioned by the recombination from ground (e1-hh1, e1-lh1) and excited (e2-hh2, e2-lh2) states of polarionic excitons in quantum wells. The doublet character of e1-hh1, e1-lh1 transitions can be explained by the interaction of excitons in quantum wells. Radiation maxima are revealed in the region of 1.5eV energy conditioned by recombination transitions Eb-hh1, Eb-lh1of the GaAs buffer layer. | en_US |
| dc.language.iso | en | en_US |
| dc.publisher | Technical University of Moldova | en_US |
| dc.rights | Attribution-NonCommercial-NoDerivs 3.0 United States | * |
| dc.rights.uri | http://creativecommons.org/licenses/by-nc-nd/3.0/us/ | * |
| dc.subject | quantum wells | en_US |
| dc.subject | heterostructures | en_US |
| dc.subject | excitons | en_US |
| dc.subject | luminescence | en_US |
| dc.title | Exciton Luminescence in In0.3Ga0.7As/GaAs Quantum Well Heterostructures | en_US |
| dc.type | Article | en_US |
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