Abstract:
Reflection spectra of In0.3Ga0.7As layers with 8nm thickness with quantum wells limited by GaAs barrier layer with 100nm thickness (bottom) and 9nm (upper) had been measured at S and P polarizations in the interval of photon energies 0.6 – 1.6eV at an incident angle near the normal one (4.5о) and Brewster angle (76 о). Thin absorption lines 0.9021eV, 1.0161eV, 1.1302eV, 1.1973eV, 1.2766eV conditioned by the transitions hh1-e1(1s), lh1-e1(1s), hh2-e2(1s), lh2e-2(1s), hh3-3(1s) and lh3-3e(1s) had been revealed. The intensity of absorption lines changes in the limits 10 – 70%.