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Interband Optical Transitions in the Region of Excitonic Resonance in In0.3Ga0.7As/GaAs Quantum Wells

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dc.contributor.author KAPON, Eli
dc.contributor.author MEREUŢA, Alexandru
dc.contributor.author DOROGAN, Andrei
dc.contributor.author DRAGUTAN, Nicolae
dc.contributor.author VIERU, Tatiana
dc.contributor.author SYRBU, Nicolae
dc.contributor.author ZALAMAI, Victor
dc.date.accessioned 2019-10-15T08:57:12Z
dc.date.available 2019-10-15T08:57:12Z
dc.date.issued 2011
dc.identifier.citation KAPON, Eli, MEREUŢA, Alexandru, DOROGAN, Andrei et al. Interband Optical Transitions in the Region of Excitonic Resonance in In0.3Ga0.7As/GaAs Quantum Wells. In: ICNBME-2011. International conference on Nanotechnologies and Biomedical Engineering. German-moldovan workshop on Novel Nanomaterials for Electronic, Photonic and Biomedical Applications: proc. of the intern. conf., July 7-8, 2011. Chişinău, 2011, pp. 142-144. ISBN 978-9975-66-239-0. en_US
dc.identifier.isbn 978-9975-66-239-0
dc.identifier.uri http://repository.utm.md/handle/5014/4682
dc.description.abstract Reflection spectra of In0.3Ga0.7As layers with 8nm thickness with quantum wells limited by GaAs barrier layer with 100nm thickness (bottom) and 9nm (upper) had been measured at S and P polarizations in the interval of photon energies 0.6 – 1.6eV at an incident angle near the normal one (4.5о) and Brewster angle (76 о). Thin absorption lines 0.9021eV, 1.0161eV, 1.1302eV, 1.1973eV, 1.2766eV conditioned by the transitions hh1-e1(1s), lh1-e1(1s), hh2-e2(1s), lh2e-2(1s), hh3-3(1s) and lh3-3e(1s) had been revealed. The intensity of absorption lines changes in the limits 10 – 70%. en_US
dc.language.iso en en_US
dc.publisher Technical University of Moldova en_US
dc.rights Attribution-NonCommercial-NoDerivs 3.0 United States *
dc.rights.uri http://creativecommons.org/licenses/by-nc-nd/3.0/us/ *
dc.subject quantum wells en_US
dc.subject optical transitions en_US
dc.subject excitons en_US
dc.subject resonance en_US
dc.title Interband Optical Transitions in the Region of Excitonic Resonance in In0.3Ga0.7As/GaAs Quantum Wells en_US
dc.type Article en_US


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