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Improvement of SiO2(Ge)SiO2/Si Nanostructures by Low Dose γ-radiation

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dc.contributor.author SHISHIYANU, S. T.
dc.contributor.author SHISHIYANU, T. S.
dc.contributor.author YILMAZ, E.
dc.contributor.author TURAN, R.
dc.contributor.author MOGADDAM, N. A. P.
dc.date.accessioned 2019-10-15T09:31:04Z
dc.date.available 2019-10-15T09:31:04Z
dc.date.issued 2011
dc.identifier.citation SHISHIYANU, S. T., SHISHIYANU, T. S., YILMAZ, E. et al. Periodic Signals From a Nanopore Coulter Counter. In: ICNBME-2011. International conference on Nanotechnologies and Biomedical Engineering. German-moldovan workshop on Novel Nanomaterials for Electronic, Photonic and Biomedical Applications: proc. of the intern. conf., July 7-8, 2011. Chişinău, 2011, pp. 203-206. ISBN 978-9975-66-239-0. en_US
dc.identifier.isbn 978-9975-66-239-0
dc.identifier.uri http://repository.utm.md/handle/5014/4685
dc.description.abstract Effect of γ – radiation on SiO2(Ge)SiO2/Si nanostructures structural defects was investigated by C-V measurements characterization. The obtained results demonstrated that by low dose γ-radiation (0.1Gy*150Gy) have been essentially reduced the negative charge defects in the nanocomposite structures SiO2(Ge)SiO2/Si. At higher doses (350Gy*4000Gy) the concentration of positive charge defects slowly increased and C-V characteristics moved to the position of the C-V characteristics of pure SiO2 (without nc-Ge) having the same curves configuration. At the average doses (200Gy*350Gy) the concentration of negative charge defects and positive charge defects were approximately equal and the radiation stability of samples was the highest. en_US
dc.language.iso en en_US
dc.publisher Technical University of Moldova en_US
dc.rights Attribution-NonCommercial-NoDerivs 3.0 United States *
dc.rights.uri http://creativecommons.org/licenses/by-nc-nd/3.0/us/ *
dc.subject nanocrystals en_US
dc.subject nanostructures en_US
dc.subject γ –radiation en_US
dc.title Improvement of SiO2(Ge)SiO2/Si Nanostructures by Low Dose γ-radiation en_US
dc.type Article en_US


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