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| dc.contributor.author | ENACHE, M. | |
| dc.contributor.author | URSAKI, V. V. | |
| dc.contributor.author | RUSU, E. V. | |
| dc.contributor.author | TAZLAVAN, V. E. | |
| dc.contributor.author | SONTEA, V. P. | |
| dc.contributor.author | TIGINYANU, I. M. | |
| dc.date.accessioned | 2019-10-16T11:22:21Z | |
| dc.date.available | 2019-10-16T11:22:21Z | |
| dc.date.issued | 2005 | |
| dc.identifier.citation | ENACHE, M., URSAKI, V. V., RUSU, E. V. et al. Luminescence of ZnSe crystals grown with different vapor transport agents. In: Microelectronics and Computer Science: proc. of the 4th intern. conf., September 15-17, 2005. Chişinău, 2005, vol. 1, pp. 105-108. ISBN 9975-66-038-X. | en_US |
| dc.identifier.isbn | 9975-66-038-X | |
| dc.identifier.uri | http://repository.utm.md/handle/5014/4740 | |
| dc.description.abstract | In this paper we compare the luminescence properties of bulk ZnSe crystals grown by vapor transport method with different transport agents in order to establish the influence of the transport agent on the relation between the excitonic, DAP, and deep center emission. ZnSe single crystals were grown using iodine or NH4Cl transport agents. Photoluminescence (PL) was excited by the 351 nm line of an Ar+ SpectraPhysics laser and analyzed through a double spectrometer. The resolution was better than 0.5 meV. The samples were mounted on the cold station of a LTS-22-C-330 cryogenic system. | en_US |
| dc.language.iso | en | en_US |
| dc.publisher | Technical University of Moldova | en_US |
| dc.rights | Attribution-NonCommercial-NoDerivs 3.0 United States | * |
| dc.rights.uri | http://creativecommons.org/licenses/by-nc-nd/3.0/us/ | * |
| dc.subject | luminescence | en_US |
| dc.subject | crystals | en_US |
| dc.subject | transport agents | en_US |
| dc.subject | photoluminescence | en_US |
| dc.title | Luminescence of ZnSe crystals grown with different vapor transport agents | en_US |
| dc.type | Article | en_US |
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