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Chalcogenide semiconductors as gas sensors

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dc.contributor.author TSIULYANU, Dumitru
dc.date.accessioned 2019-10-16T13:01:33Z
dc.date.available 2019-10-16T13:01:33Z
dc.date.issued 2005
dc.identifier.citation TSIULYANU, Alexantru. Effect of contacts and thickness on the NO2 sensing properties of tellurium based films. In: Microelectronics and Computer Science: proc. of the 4th intern. conf., September 15-17, 2005. Chişinău, 2005, vol. 1, pp. 145-148. ISBN 9975-66-038-X. en_US
dc.identifier.isbn 9975-66-038-X
dc.identifier.uri http://repository.utm.md/handle/5014/4755
dc.description.abstract A brief survey of experimental results to gas sensing with chalcogenide semiconductor based devices is given. It is pointed out that physical phenomena such as electrical conductivity can be coupled to chemical reactions on the surface or within the sensing material. Sensors based on tellurium alloys for detection of nitrogen dioxide, ammonia or carbon oxide are described in some detail. A general discussion is given about the fundamental mechanisms of gas sensing with these materials taking into consideration their special chemistry and defect states. en_US
dc.language.iso en en_US
dc.publisher Technical University of Moldova en_US
dc.rights Attribution-NonCommercial-NoDerivs 3.0 United States *
dc.rights.uri http://creativecommons.org/licenses/by-nc-nd/3.0/us/ *
dc.subject gas sensors en_US
dc.subject chalcogenide semiconductors en_US
dc.subject semiconductors en_US
dc.title Chalcogenide semiconductors as gas sensors en_US
dc.type Article en_US


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