dc.contributor.author | BODIUL, Pavel | |
dc.contributor.author | PEEV, Leonid | |
dc.date.accessioned | 2019-10-17T07:52:08Z | |
dc.date.available | 2019-10-17T07:52:08Z | |
dc.date.issued | 2005 | |
dc.identifier.citation | BODIUL, Pavel, PEEV, Leonid. Peculairities of impurity influience in weakly degenerated systems. In: Microelectronics and Computer Science: proc. of the 4th intern. conf., September 15-17, 2005. Chişinău, 2005, vol. 1, pp. 189-191. ISBN 9975-66-038-X. | en_US |
dc.identifier.issn | 9975-66-038-X | |
dc.identifier.uri | http://repository.utm.md/handle/5014/4762 | |
dc.description.abstract | It is experimentally found that small additions to bismuth of elements of the IV and VI groups lead to such change in concentration of free charge carriers that it is less than one electron per atom and considerably depends on nature of the latter. Composition of ternary alloys of bismuth with elements of the IV and VI groups with the electric properties close to those of pure bismuth was successful at the liquid nitrogen temperature. | en_US |
dc.language.iso | en | en_US |
dc.publisher | Technical University of Moldova | en_US |
dc.rights | Attribution-NonCommercial-NoDerivs 3.0 United States | * |
dc.rights.uri | http://creativecommons.org/licenses/by-nc-nd/3.0/us/ | * |
dc.subject | bismuth | en_US |
dc.subject | weakly degenerated systems | en_US |
dc.title | Peculairities of impurity influience in weakly degenerated systems | en_US |
dc.type | Article | en_US |
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