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Peculairities of impurity influience in weakly degenerated systems

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dc.contributor.author BODIUL, Pavel
dc.contributor.author PEEV, Leonid
dc.date.accessioned 2019-10-17T07:52:08Z
dc.date.available 2019-10-17T07:52:08Z
dc.date.issued 2005
dc.identifier.citation BODIUL, Pavel, PEEV, Leonid. Peculairities of impurity influience in weakly degenerated systems. In: Microelectronics and Computer Science: proc. of the 4th intern. conf., September 15-17, 2005. Chişinău, 2005, vol. 1, pp. 189-191. ISBN 9975-66-038-X. en_US
dc.identifier.issn 9975-66-038-X
dc.identifier.uri http://repository.utm.md/handle/5014/4762
dc.description.abstract It is experimentally found that small additions to bismuth of elements of the IV and VI groups lead to such change in concentration of free charge carriers that it is less than one electron per atom and considerably depends on nature of the latter. Composition of ternary alloys of bismuth with elements of the IV and VI groups with the electric properties close to those of pure bismuth was successful at the liquid nitrogen temperature. en_US
dc.language.iso en en_US
dc.publisher Technical University of Moldova en_US
dc.rights Attribution-NonCommercial-NoDerivs 3.0 United States *
dc.rights.uri http://creativecommons.org/licenses/by-nc-nd/3.0/us/ *
dc.subject bismuth en_US
dc.subject weakly degenerated systems en_US
dc.title Peculairities of impurity influience in weakly degenerated systems en_US
dc.type Article en_US


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