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Nitrogen localized states in presence of bi-dimensional electron gas in heavily doped GaAs1-xNx

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dc.contributor.author HAMDOUNI, A.
dc.contributor.author BOUSBIH, F.
dc.contributor.author BOUZID, S. Ben
dc.contributor.author CHTOUROU, R.
dc.contributor.author HARMAND, J. C.
dc.date.accessioned 2019-10-18T09:47:59Z
dc.date.available 2019-10-18T09:47:59Z
dc.date.issued 2005
dc.identifier.citation HAMDOUNI, A., BOUSBIH, F., BOUZID, S. Ben et al. Nitrogen localized states in presence of bi-dimensional electron gas in heavily doped GaAs1-xNx. In: Microelectronics and Computer Science: proc. of the 4th intern. conf., September 15-17, 2005. Chişinău, 2005, vol. 1, pp. 36-39. ISBN 9975-66-038-X. en_US
dc.identifier.isbn 9975-66-038-X
dc.identifier.uri http://repository.utm.md/handle/5014/4828
dc.description.abstract We report a low-temperature photoluminescence spectra (LTPL) of GaAs1-xNx layers and 2 dimension electron gas (2DEG) GaAs1-xNx/AlGaAs modulation doped heterostructure grown on GaAs substrates by molecular beam epitaxy (MBE) with low nitrogen content [N]=21018cm-3. At low temperature PL spectra of GaAs1-xNx layers are governed by several features associate to the excitons bound to nitrogen complexes, these features disappear in (2DEG) GaAs1-xNx/AlGaAs modulation doped heterostructure and the PL peak energy decrease with the laser power excitation. This effect is explained by the strongly coupling of the (2DEG) fundamental state with the nitrogen localized states. An activated energy of about 55 meV is deduced by photoluminescence measurements in the 10 to 300 K range for a laser power excitation P=6W/cm2. en_US
dc.language.iso en en_US
dc.publisher Technical University of Moldova en_US
dc.rights Attribution-NonCommercial-NoDerivs 3.0 United States *
dc.rights.uri http://creativecommons.org/licenses/by-nc-nd/3.0/us/ *
dc.subject molecular beam epitaxy en_US
dc.subject photoluminescence spectroscopy en_US
dc.subject spectroscopy en_US
dc.subject electron gases en_US
dc.subject Si-doping en_US
dc.title Nitrogen localized states in presence of bi-dimensional electron gas in heavily doped GaAs1-xNx en_US
dc.type Article en_US


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