Autler–townes effect on the excitons and biexcitons in semiconductors

dc.contributor.author	KHADZHI, P. I.
dc.contributor.author	NADKIN, L. Yu.
dc.contributor.author	TKACHENKO, D. V.
dc.date.accessioned	2019-10-18T11:01:57Z
dc.date.available	2019-10-18T11:01:57Z
dc.date.issued	2005
dc.identifier.uri	http://repository.utm.md/handle/5014/4842
dc.description.abstract	The behavior of the semiconductor dielectric susceptibility under the stationary action of a strong laser pulse in the range of M–band of luminescence and the test pulse in the exciton range of spectrum is investigated. The well pronounced Autler–Townes effect occurs at the exciton range. The position of the absorption peaks is determined by the amplitude and frequency of pump pulse.	en_US
dc.language.iso	en	en_US
dc.rights	Attribution-NonCommercial-NoDerivs 3.0 United States	*
dc.rights.uri	http://creativecommons.org/licenses/by-nc-nd/3.0/us/	*
dc.subject	excitons	en_US
dc.subject	biexcitons	en_US
dc.subject	semiconductors	en_US
dc.title	Autler–townes effect on the excitons and biexcitons in semiconductors	en_US
dc.type	Article	en_US