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Structure features of protocrystalline silicon films

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dc.contributor.author VORONTSOV, Alexander
dc.contributor.author EMELYANOV, Andrey
dc.contributor.author FORSH, Pavel
dc.contributor.author KONSTANTINOVA, Elizaveta
dc.contributor.author KASHKAROV, Pavel
dc.date.accessioned 2019-10-18T12:29:19Z
dc.date.available 2019-10-18T12:29:19Z
dc.date.issued 2014
dc.identifier.citation VORONTSOV, Alexander, EMELYANOV, Andrey, FORSH, Pavel, KONSTANTINOVA, Elizaveta, KASHKAROV, Pavel. Structure features of protocrystalline silicon films. In: Microelectronics and Computer Science: proc. of the 8th intern. conf., October 22-25, 2014. Chişinău, 2014, pp. 48-49. ISBN 978-9975-45-329-5. en_US
dc.identifier.isbn 978-9975-45-329-5
dc.identifier.uri http://repository.utm.md/handle/5014/4855
dc.description.abstract The structural and electronic properties of thin protocrystalline silicon films obtained by plasma-enhanced chemical vapor deposition from hydrogen (H2) and monosilane (SiH4) gas mixture have been studied by means of transmission electron microscopy, electron paramagnetic resonance (EPR) spectroscopy, and Raman spectroscopy. It has been established that the studied films consist of the amorphous phase containing silicon nanocrystalline inclusions with the average size on the order of 4–5 nm and the volume fraction of 10%. The EPR spectroscopy data show that in the investigated samples there are electrons trapped in the conduction band tail of protocrystalline silicon. It has been shown that the introduction of a small fraction of nanocrystals into the amorphous silicon films nonadditively changes the electronic properties of the material. en_US
dc.language.iso en en_US
dc.publisher Tehnica UTM en_US
dc.rights Attribution-NonCommercial-NoDerivs 3.0 United States *
dc.rights.uri http://creativecommons.org/licenses/by-nc-nd/3.0/us/ *
dc.subject protocrystalline silicon films en_US
dc.subject raman spectroscopy en_US
dc.title Structure features of protocrystalline silicon films en_US
dc.type Article en_US


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