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Metal– semiconductor and HTSC – semiconductor contacts for diode detectors

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dc.contributor.author KERNER, Iacov
dc.date.accessioned 2019-10-21T06:43:52Z
dc.date.available 2019-10-21T06:43:52Z
dc.date.issued 2005
dc.identifier.citation KERNER, Iacov. Metal– semiconductor and HTSC – semiconductor contacts for diode detectors. In: Microelectronics and Computer Science: proc. of the 4th intern. conf., September 15-17, 2005. Chişinău, 2005, vol. 1, pp. 149-152. ISBN 9975-66-038-X. en_US
dc.identifier.isbn 9975-66-038-X
dc.identifier.uri http://repository.utm.md/handle/5014/4888
dc.description.abstract The numerical modeling of the electrical potential distribution and current passing in the contacts of the high temperature superconductor with semiconductor InSb had been made. There were analyzed the possibilities to create the diode detectors (DD) based on these contacts and working at liquid nitrogen temperature 77.4 K. The comparison with existent literature data shows the proposed DD can be 10÷100 times better. Therefore these DD are perspective for cryogenic electronics and there is an actual problem to elaborate them. en_US
dc.language.iso en en_US
dc.publisher Technical University of Moldova en_US
dc.rights Attribution-NonCommercial-NoDerivs 3.0 United States *
dc.rights.uri http://creativecommons.org/licenses/by-nc-nd/3.0/us/ *
dc.subject superconductivity en_US
dc.subject Schottky diodes en_US
dc.subject diodes en_US
dc.subject semiconductor contacts en_US
dc.title Metal– semiconductor and HTSC – semiconductor contacts for diode detectors en_US
dc.type Article en_US


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