Investigation of the CdTe epitaxial layers EDGE radiation spectrum structure

Abstract

Recently the interest toward alternative energy sources had sharply increase. Solar energy conversion into electrical one is among the most perspective kinds of non- traditional kinds of energy supply. Cadmium telluride is one of the most perspective materials of II-VI wide band gap semiconductors suitable for solution of this problem. Cadmium telluride has a band gap of 1,45 eV corresponding to solar radiation maximum, posses high values of charge carriers mobility and is a semiconductor in which direct optical transitions are realized. It is the only II-VI compound which can be relatively easy obtained both as of n-type as well as p-type conductivity. However, its wide practical utilization in photo converters is limited, on the first hand, by the difficulties of fabrication of high quality films, and also by the defects compensation and self compensation processes. One of the important directions in the photo converters work parameters enhancement is the development of the efficient technology of single crystal and polycrystalline CdTe layers growth with the given physical properties.