dc.contributor.author | CARAMAN, Mihail | |
dc.contributor.author | EVTODIEV, Igor | |
dc.contributor.author | CUCULESCU, Elmira | |
dc.date.accessioned | 2019-10-21T07:05:39Z | |
dc.date.available | 2019-10-21T07:05:39Z | |
dc.date.issued | 2005 | |
dc.identifier.citation | CARAMAN, Mihail, EVTODIEV, Igor, CUCULESCU, Elmira. The capture and recombination levels energetic diagram in GaSe (Cu) stratified single crystals. In: Microelectronics and Computer Science: proc. of the 4th intern. conf., September 15-17, 2005. Chişinău, 2005, vol. 1, pp. 157-161. ISBN 9975-66-038-X. | en_US |
dc.identifier.isbn | 9975-66-038-X | |
dc.identifier.uri | http://repository.utm.md/handle/5014/4890 | |
dc.description.abstract | By studying PL spectra, as well photonductivity kinetics and spectral dependences, for different excitation (photon) energies in temperature range 78 K up to ~420 K, energies of localized states due to both Cu and noncontrollable impurities are determined. From comparative annalyse of temperature dependence of electrical conductivity and photoconductivity for undoped and Cu-doped films, the activation energy of acceptor levels was determined as 0.058 and 0.025 eV for GaSe(Cu) films. | en_US |
dc.language.iso | en | en_US |
dc.publisher | Technical University of Moldova | en_US |
dc.rights | Attribution-NonCommercial-NoDerivs 3.0 United States | * |
dc.rights.uri | http://creativecommons.org/licenses/by-nc-nd/3.0/us/ | * |
dc.subject | thin films | en_US |
dc.subject | photoluminescence | en_US |
dc.subject | photoconduction | en_US |
dc.subject | single crystals | en_US |
dc.title | The capture and recombination levels energetic diagram in GaSe (Cu) stratified single crystals | en_US |
dc.type | Article | en_US |
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