dc.contributor.author | COJOCARI, O. | |
dc.contributor.author | SYDLO, C. | |
dc.contributor.author | HARTNAGEL, H.-L. | |
dc.contributor.author | TIGINYANU, I. M. | |
dc.date.accessioned | 2019-10-21T09:08:54Z | |
dc.date.available | 2019-10-21T09:08:54Z | |
dc.date.issued | 2005 | |
dc.identifier.citation | COJOCARI, O., SYDLO, C., HARTNAGEL, H.-L. et al. Quasi-vertical Schottky-structures for THZ-applications. In: Microelectronics and Computer Science: proc. of the 4th intern. conf., September 15-17, 2005. Chişinău, 2005, vol. 1, pp. 219-225. ISBN 9975-66-038-X. | en_US |
dc.identifier.isbn | 9975-66-038-X | |
dc.identifier.uri | http://repository.utm.md/handle/5014/4900 | |
dc.description.abstract | This paper presents the results of a systematical work on the improvement of high-frequency performance of quasi-vertical structures for THz-applications. Three versions of structure-design based on a quasi-vertical concept were successfully fabricated and characterized. The anti-parallel mixer-diode pair demonstrated a high performance at frequencies up to around 200 GHz. Measurements at frequencies about 600 GHz of a single diode structure mounted in a heterodyne mixer revealed a voltage responsivity of more than 1500 V/W and conversion loss (SSB) of bellow 10 dB. Microwave-noise measurements of such structure revealed typical values of the junction noise to be lower than 300 K at frequencies between 2.1 GHz and 4.8 GHz and at a bias current up to 3 mA. Low-frequency noise of these diodes is typically about 4 μV/Hz1/2 at 1 Hz. Achieved DC-characteristics are as follows: series resistance Rs < 7 Ω, ideality factor η < 1.2 and junction capacitance at 0 V C0j < 2.3 fF. The total capacitance of this structure is C0 < 7 fF. These data result in a calculated cut-off-frequency of well above 3 THz. | en_US |
dc.language.iso | en | en_US |
dc.publisher | Technical University of Moldova | en_US |
dc.rights | Attribution-NonCommercial-NoDerivs 3.0 United States | * |
dc.rights.uri | http://creativecommons.org/licenses/by-nc-nd/3.0/us/ | * |
dc.subject | Schottky diodes | en_US |
dc.subject | diodes | en_US |
dc.subject | quasi-vertical structures | en_US |
dc.subject | THz-applications | en_US |
dc.title | Quasi-vertical Schottky-structures for THZ-applications | en_US |
dc.type | Article | en_US |
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