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Silicon nanocluster in silicon dioxide

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dc.contributor.author SOKOLOV, V. I.
dc.contributor.author ZAMORYANSKAYA, M. V.
dc.date.accessioned 2019-10-21T10:47:14Z
dc.date.available 2019-10-21T10:47:14Z
dc.date.issued 2005
dc.identifier.citation SOKOLOV, V. I., ZAMORYANSKAYA, M. V. Silicon nanocluster in silicon dioxide. In: Microelectronics and Computer Science: proc. of the 4th intern. conf., September 15-17, 2005. Chişinău, 2005, vol. 1, pp. 251-254. ISBN 9975-66-038-X. en_US
dc.identifier.isbn 9975-66-038-X
dc.identifier.uri http://repository.utm.md/handle/5014/4926
dc.description.abstract Cathodoluminescence spectra of silicate systems, have two well-known bands associated with native SiO2 defects, namely, a red one peaking at 1.9 eV (twofold-coordinated silicon). The position and intensity of these bands in thermally grown films vary depending on the silicon type and the technology of the film preparation. The bands are the strongest for films grown on p silicon. A layer - by - layer analysis of thermal oxide films on p silicon showed that the band in green spectral region appears on the interface and on the adjoining oxide layers 0.1-0.2 um thick. To establish the nature of the centers responsible for the green bands, we studied cathodoluminescence spectra of various silicate systems. en_US
dc.language.iso en en_US
dc.publisher Technical University of Moldova en_US
dc.rights Attribution-NonCommercial-NoDerivs 3.0 United States *
dc.rights.uri http://creativecommons.org/licenses/by-nc-nd/3.0/us/ *
dc.subject silicon nanoclusters en_US
dc.subject silicon dioxide en_US
dc.subject cathodoluminescence spectras en_US
dc.subject silicate systems en_US
dc.title Silicon nanocluster in silicon dioxide en_US
dc.type Article en_US


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