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Exciton properties of nanoscale heterostrucrures AlxGa1-xN/GaN/AlxGa1-xN

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dc.contributor.author NIKA, D. L.
dc.contributor.author POKATILOV, E. P.
dc.contributor.author FOMIN, V. M.
dc.contributor.author DEVREESE, J. T.
dc.date.accessioned 2019-10-21T11:01:02Z
dc.date.available 2019-10-21T11:01:02Z
dc.date.issued 2005
dc.identifier.citation NIKA, D. L., POKATILOV, E. P., FOMIN, V. M. et al. Exciton properties of nanoscale heterostrucrures AlxGa1-xN/GaN/AlxGa1-xN. In: Microelectronics and Computer Science: proc. of the 4th intern. conf., September 15-17, 2005. Chişinău, 2005, vol. 1, pp. 259-261. ISBN 9975-66-038-X. en_US
dc.identifier.isbn 9975-66-038-X
dc.identifier.uri http://repository.utm.md/handle/5014/4931
dc.description.abstract For the heterostructures AlxGa1-x N/GaN/AlxGa1-x N with different thicknesses of the GaN quantum wells and AlxGa1-xN barriers, we use an exciton model, which includes the interaction of an electron and a hole with deformations of the crystal lattice and with built-in electrostatic fields. It is based on a 6-band hole Hamiltonian, as distinct from the variational approach. Exciton energy spectra and wave functions for the ground state and some excited states are found after a numerical diagonalization of the 6-band matrix hole Hamiltonian with an adaptive grid. The photoluminescence peak position, the exciton oscillator strengths and the exciton radiative lifetime have been investigated as a function of the thicknesses of quantum wells and barriers as well as of the concentration x of Al in the barrier .The developed theoretical approach has allowed us to interpret the position of the zero-phonon and one-phonon photoluminescence bands and to obtain the exciton radiative lifetime in a good agreement with experiment. en_US
dc.language.iso en en_US
dc.publisher Technical University of Moldova en_US
dc.rights Attribution-NonCommercial-NoDerivs 3.0 United States *
dc.rights.uri http://creativecommons.org/licenses/by-nc-nd/3.0/us/ *
dc.subject excitons en_US
dc.subject heterostructures en_US
dc.subject photoluminescence en_US
dc.title Exciton properties of nanoscale heterostrucrures AlxGa1-xN/GaN/AlxGa1-xN en_US
dc.type Article en_US


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