dc.contributor.author | NIKA, D. L. | |
dc.contributor.author | POKATILOV, E. P. | |
dc.contributor.author | FOMIN, V. M. | |
dc.contributor.author | DEVREESE, J. T. | |
dc.date.accessioned | 2019-10-21T11:01:02Z | |
dc.date.available | 2019-10-21T11:01:02Z | |
dc.date.issued | 2005 | |
dc.identifier.citation | NIKA, D. L., POKATILOV, E. P., FOMIN, V. M. et al. Exciton properties of nanoscale heterostrucrures AlxGa1-xN/GaN/AlxGa1-xN. In: Microelectronics and Computer Science: proc. of the 4th intern. conf., September 15-17, 2005. Chişinău, 2005, vol. 1, pp. 259-261. ISBN 9975-66-038-X. | en_US |
dc.identifier.isbn | 9975-66-038-X | |
dc.identifier.uri | http://repository.utm.md/handle/5014/4931 | |
dc.description.abstract | For the heterostructures AlxGa1-x N/GaN/AlxGa1-x N with different thicknesses of the GaN quantum wells and AlxGa1-xN barriers, we use an exciton model, which includes the interaction of an electron and a hole with deformations of the crystal lattice and with built-in electrostatic fields. It is based on a 6-band hole Hamiltonian, as distinct from the variational approach. Exciton energy spectra and wave functions for the ground state and some excited states are found after a numerical diagonalization of the 6-band matrix hole Hamiltonian with an adaptive grid. The photoluminescence peak position, the exciton oscillator strengths and the exciton radiative lifetime have been investigated as a function of the thicknesses of quantum wells and barriers as well as of the concentration x of Al in the barrier .The developed theoretical approach has allowed us to interpret the position of the zero-phonon and one-phonon photoluminescence bands and to obtain the exciton radiative lifetime in a good agreement with experiment. | en_US |
dc.language.iso | en | en_US |
dc.publisher | Technical University of Moldova | en_US |
dc.rights | Attribution-NonCommercial-NoDerivs 3.0 United States | * |
dc.rights.uri | http://creativecommons.org/licenses/by-nc-nd/3.0/us/ | * |
dc.subject | excitons | en_US |
dc.subject | heterostructures | en_US |
dc.subject | photoluminescence | en_US |
dc.title | Exciton properties of nanoscale heterostrucrures AlxGa1-xN/GaN/AlxGa1-xN | en_US |
dc.type | Article | en_US |
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