Photoconductivity relaxation in nanostructured InP

Abstract

We show that long-duration-photoconductivity decay (LDPCD) and persistent photoconductivity (PPC) in porous InP structures produced by anodization of InP substrates can be controlled through the control of their morphology. Particularly, the PPC inherent at low temperatures to porous InP layers with the thickness of skeleton walls comparable with pore diameters is quenched in structures consisting of ultrathin walls produced at high anodization voltages.