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Photoconductivity relaxation in nanostructured InP

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dc.contributor.author POSTOLACHE, Vitalie
dc.contributor.author MONAICO, Eduard
dc.contributor.author BORODIN, Eugeniu
dc.contributor.author LUPAN, Oleg
dc.contributor.author URSAKI, Veaceslav
dc.contributor.author ADELUNG, Rainer
dc.contributor.author NIELSH, Kornelius
dc.contributor.author TIGINYANU, Ion
dc.date.accessioned 2019-10-21T12:52:14Z
dc.date.available 2019-10-21T12:52:14Z
dc.date.issued 2014
dc.identifier.citation POSTOLACHE, Vitalie, MONAICO, Eduard, BORODIN, Eugeniu, LUPAN, Oleg, URSAKI, Veaceslav, ADELUNG, Rainer, NIELSH, Kornelius, TIGINYANU, Ion. Photoconductivity relaxation in nanostructured InP. In: Microelectronics and Computer Science: proc. of the 8th intern. conf., October 22-25, 2014. Chişinău, 2014, pp. 94-97. ISBN 978-9975-45-329-5. en_US
dc.identifier.isbn 978-9975-45-329-5
dc.identifier.uri http://repository.utm.md/handle/5014/4948
dc.description.abstract We show that long-duration-photoconductivity decay (LDPCD) and persistent photoconductivity (PPC) in porous InP structures produced by anodization of InP substrates can be controlled through the control of their morphology. Particularly, the PPC inherent at low temperatures to porous InP layers with the thickness of skeleton walls comparable with pore diameters is quenched in structures consisting of ultrathin walls produced at high anodization voltages. en_US
dc.language.iso en en_US
dc.publisher Tehnica UTM en_US
dc.rights Attribution-NonCommercial-NoDerivs 3.0 United States *
dc.rights.uri http://creativecommons.org/licenses/by-nc-nd/3.0/us/ *
dc.subject porous InP en_US
dc.subject anodization en_US
dc.subject ultrathin walls en_US
dc.subject photoconductivity decay en_US
dc.title Photoconductivity relaxation in nanostructured InP en_US
dc.type Article en_US


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