DSpace Repository
Monte-Carlo-Simulation of Crystallographical Pore Growth in III-V-Semiconductors
JavaScript is disabled for your browser. Some features of this site may not work without it.
| dc.contributor.author | LEISNER, Malte | |
| dc.contributor.author | CARSTENSEN, Jürgen | |
| dc.contributor.author | FÖLL, Helmut | |
| dc.date.accessioned | 2019-10-22T09:03:30Z | |
| dc.date.available | 2019-10-22T09:03:30Z | |
| dc.date.issued | 2011 | |
| dc.identifier.citation | LEISNER, Malte, CARSTENSEN, Jürgen, FÖLL, Helmut. Monte-Carlo-Simulation of Crystallographical Pore Growth in III-V-Semiconductors. In: ICNBME-2011. International conference on Nanotechnologies and Biomedical Engineering. German-moldovan workshop on Novel Nanomaterials for Electronic, Photonic and Biomedical Applications: proc. of the intern. conf., July 7-8, 2011. Chişinău, 2011, pp. 13-15. ISBN 978-9975-66-239-0. | en_US |
| dc.identifier.isbn | 978-9975-66-239-0 | |
| dc.identifier.uri | http://repository.utm.md/handle/5014/4985 | |
| dc.description.abstract | The growth of crystallographical pores in III-V-semiconductors can be understood in the framework of a simple model, which is based on the assumption that the branching of pores is proportional to the current density at the pore tips. The stochastic nature of this model allows its implementation into a three-dimensional Monte-Carlo-simulation of pore growth. The simulation is able to reproduce the experimentally observed crysto pore structures in III-V-semiconductors in full quantitative detail. The different branching probabilities for different semiconductors, as well as doping levels, can be deduced from the specific passivation behavior of the semiconductor-electrolyte-interface at the pore tips. | en_US |
| dc.language.iso | en | en_US |
| dc.publisher | Technical University of Moldova | en_US |
| dc.rights | Attribution-NonCommercial-NoDerivs 3.0 United States | * |
| dc.rights.uri | http://creativecommons.org/licenses/by-nc-nd/3.0/us/ | * |
| dc.subject | crystallographical pores | en_US |
| dc.subject | electrochemical etching | en_US |
| dc.subject | Monte-Carlo-simulation | en_US |
| dc.subject | semiconductors | en_US |
| dc.title | Monte-Carlo-Simulation of Crystallographical Pore Growth in III-V-Semiconductors | en_US |
| dc.type | Article | en_US |
Files in this item
The following license files are associated with this item:
This item appears in the following Collection(s)
Except where otherwise noted, this item's license is described as Attribution-NonCommercial-NoDerivs 3.0 United States