Ballistic Charge Carrier Devices for Terahertz

Abstract

It is of great interest, to produce light-weight Terahertz sources for the many appl ications such as security testing. By reducing the transit distance suitably, the charge carrier can be approximately ballistic, that is without any collision damping. Such structures have been fabricated by epitaxial technology. Another feature can be employed there, namely the loss-free reflection of carriers at a heterojunction barrier. Therefore the charge carriers can be made to resonate between two such barriers at a Terahertz frequency.