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| dc.contributor.author | IOVU, M. S. | |
| dc.contributor.author | COLOMEICO, E. P. | |
| dc.contributor.author | BENEA, V. G. | |
| dc.contributor.author | ANDRIESH, A. M. | |
| dc.date.accessioned | 2019-10-23T08:16:10Z | |
| dc.date.available | 2019-10-23T08:16:10Z | |
| dc.date.issued | 2011 | |
| dc.identifier.citation | IOVU, M. S., COLOMEICO, E. P., BENEA, V. G. et al. Optical Properties of Phase Change Memory Ge1Sb2Te4 Glasses. In: ICNBME-2011. International conference on Nanotechnologies and Biomedical Engineering. German-moldovan workshop on Novel Nanomaterials for Electronic, Photonic and Biomedical Applications: proc. of the intern. conf., July 7-8, 2011. Chişinău, 2011, pp. 90-93. ISBN 978-9975-66-239-0. | en_US |
| dc.identifier.isbn | 978-9975-66-239-0 | |
| dc.identifier.uri | http://repository.utm.md/handle/5014/5057 | |
| dc.description.abstract | Phase change memory materials are promising for the next-generation of non-volatile flash memory that will serve in new mobile computing, entertainment and other handheld electronics. Among them are chalcogenide glasses Ge-Sb-Te (GST) which can exist in two separates structural states – amorphous and cristalline. Switching of the material from one to another state can be done by heating applying an electrical pulse or by exposure to intense laser beam. We report the changes of optical parameters of amorphous Ge1Sb2Te4 films under heat treatment and light exposure. | en_US |
| dc.language.iso | en | en_US |
| dc.publisher | Technical University of Moldova | en_US |
| dc.rights | Attribution-NonCommercial-NoDerivs 3.0 United States | * |
| dc.rights.uri | http://creativecommons.org/licenses/by-nc-nd/3.0/us/ | * |
| dc.subject | memory materials | en_US |
| dc.subject | flash memory | en_US |
| dc.subject | refractive indexes | en_US |
| dc.subject | amorphous films | en_US |
| dc.subject | films | en_US |
| dc.title | Optical Properties of Phase Change Memory Ge1Sb2Te4 Glasses | en_US |
| dc.type | Article | en_US |
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