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Optical Properties of Phase Change Memory Ge1Sb2Te4 Glasses

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dc.contributor.author IOVU, M. S.
dc.contributor.author COLOMEICO, E. P.
dc.contributor.author BENEA, V. G.
dc.contributor.author ANDRIESH, A. M.
dc.date.accessioned 2019-10-23T08:16:10Z
dc.date.available 2019-10-23T08:16:10Z
dc.date.issued 2011
dc.identifier.citation IOVU, M. S., COLOMEICO, E. P., BENEA, V. G. et al. Optical Properties of Phase Change Memory Ge1Sb2Te4 Glasses. In: ICNBME-2011. International conference on Nanotechnologies and Biomedical Engineering. German-moldovan workshop on Novel Nanomaterials for Electronic, Photonic and Biomedical Applications: proc. of the intern. conf., July 7-8, 2011. Chişinău, 2011, pp. 90-93. ISBN 978-9975-66-239-0. en_US
dc.identifier.isbn 978-9975-66-239-0
dc.identifier.uri http://repository.utm.md/handle/5014/5057
dc.description.abstract Phase change memory materials are promising for the next-generation of non-volatile flash memory that will serve in new mobile computing, entertainment and other handheld electronics. Among them are chalcogenide glasses Ge-Sb-Te (GST) which can exist in two separates structural states – amorphous and cristalline. Switching of the material from one to another state can be done by heating applying an electrical pulse or by exposure to intense laser beam. We report the changes of optical parameters of amorphous Ge1Sb2Te4 films under heat treatment and light exposure. en_US
dc.language.iso en en_US
dc.publisher Technical University of Moldova en_US
dc.rights Attribution-NonCommercial-NoDerivs 3.0 United States *
dc.rights.uri http://creativecommons.org/licenses/by-nc-nd/3.0/us/ *
dc.subject memory materials en_US
dc.subject flash memory en_US
dc.subject refractive indexes en_US
dc.subject amorphous films en_US
dc.subject films en_US
dc.title Optical Properties of Phase Change Memory Ge1Sb2Te4 Glasses en_US
dc.type Article en_US


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