DSpace Repository

Crystalline structure, photoluminescence and optical absorption of ß - Ga2S3 crystals

Show simple item record

dc.contributor.author CARAMAN, Iuliana
dc.contributor.author EVTODIEV, Ig.
dc.contributor.author PALACHI, L.
dc.contributor.author NEDEFF, V.
dc.contributor.author LEONTIE, L
dc.contributor.author RACOVEŢ, Oxana
dc.contributor.author UNTILA, D.
dc.contributor.author VATAVU, Elmira
dc.date.accessioned 2019-10-24T11:18:30Z
dc.date.available 2019-10-24T11:18:30Z
dc.date.issued 2013
dc.identifier.isbn 978-9975-62-343-8
dc.identifier.uri http://repository.utm.md/handle/5014/5208
dc.description.abstract Crystalline structure, photoluminescence and optical absorption of Ga2S3 in form of monocrystalline layers at 78K and 293K were investigated. A indirect optical bandgap of 2,94 eV and 3,078 eV was found for monocrystalline samples, and of 3,149 eV and 3,393 eV for direct optical band gap, at 293K and 78K, respectively. The photoluminescence spectrum of monocrystalline layers at 78K consists of three main bands peaked at 2,04 eV, 1,84 eV and 1,66 eV. Structural native defects create deep recombination and electron capture levels within the Ga2S3 band gap. en_US
dc.language.iso en en_US
dc.publisher Tehnica UTM en_US
dc.rights Attribution-NonCommercial-NoDerivs 3.0 United States *
dc.rights.uri http://creativecommons.org/licenses/by-nc-nd/3.0/us/ *
dc.subject layered semiconductors en_US
dc.subject semiconductors en_US
dc.subject photoluminescence en_US
dc.title Crystalline structure, photoluminescence and optical absorption of ß - Ga2S3 crystals en_US
dc.type Article en_US


Files in this item

The following license files are associated with this item:

This item appears in the following Collection(s)

Show simple item record

Attribution-NonCommercial-NoDerivs 3.0 United States Except where otherwise noted, this item's license is described as Attribution-NonCommercial-NoDerivs 3.0 United States

Search DSpace


Advanced Search

Browse

My Account