DSpace Repository
Generalized bipolariton model. Propagation of a ultrashort laser pulse through a thin semiconductor film in the conditions of two-photon generation of biexcitons
JavaScript is disabled for your browser. Some features of this site may not work without it.
| dc.contributor.author | BELOUSSOV, Igor | |
| dc.date.accessioned | 2019-10-24T13:03:07Z | |
| dc.date.available | 2019-10-24T13:03:07Z | |
| dc.date.issued | 2013 | |
| dc.identifier.citation | BELOUSSOV, Igor. Generalized bipolariton model. Propagation of a ultrashort laser pulse through a thin semiconductor film in the conditions of two-photon generation of biexcitons. In: ICNBME-2013. International Conference on Nanotechnologies and Biomedical Engineering. German-Moldovan Workshop on Novel Nanomaterials for Electronic, Photonic and Biomedical Applications: proc. of the 2th intern. conf., April 18-20, 2013. Chişinău, 2013, pp. 138-142. ISBN 978-9975-62-343-8 | en_US |
| dc.identifier.isbn | 978-9975-62-343-8 | |
| dc.identifier.uri | http://repository.utm.md/handle/5014/5231 | |
| dc.description.abstract | A generalized bipolariton model is proposed. Bipolaritons is formed from virtual excitons of four kinds. There exists both attractive and repulsive interaction between these excitons, though only excitons of a specific type can interact with light. A substantial difference between conventional and our models is shown for the case of nonlinear transmission/reflection of ultrashort laser pulses by a thin semiconductor film under two-photon generation of biexcitons | en_US |
| dc.language.iso | en | en_US |
| dc.publisher | Tehnica UTM | en_US |
| dc.subject | biexciton | en_US |
| dc.subject | bipolariton | en_US |
| dc.subject | semiconductor | en_US |
| dc.subject | ultrashort laser pulse | en_US |
| dc.title | Generalized bipolariton model. Propagation of a ultrashort laser pulse through a thin semiconductor film in the conditions of two-photon generation of biexcitons | en_US |
| dc.type | Article | en_US |
