DSpace Repository

Generalized bipolariton model. Propagation of a ultrashort laser pulse through a thin semiconductor film in the conditions of two-photon generation of biexcitons

Show simple item record

dc.contributor.author BELOUSSOV, Igor
dc.date.accessioned 2019-10-24T13:03:07Z
dc.date.available 2019-10-24T13:03:07Z
dc.date.issued 2013
dc.identifier.citation BELOUSSOV, Igor. Generalized bipolariton model. Propagation of a ultrashort laser pulse through a thin semiconductor film in the conditions of two-photon generation of biexcitons. In: ICNBME-2013. International Conference on Nanotechnologies and Biomedical Engineering. German-Moldovan Workshop on Novel Nanomaterials for Electronic, Photonic and Biomedical Applications: proc. of the 2th intern. conf., April 18-20, 2013. Chişinău, 2013, pp. 138-142. ISBN 978-9975-62-343-8 en_US
dc.identifier.isbn 978-9975-62-343-8
dc.identifier.uri http://repository.utm.md/handle/5014/5231
dc.description.abstract A generalized bipolariton model is proposed. Bipolaritons is formed from virtual excitons of four kinds. There exists both attractive and repulsive interaction between these excitons, though only excitons of a specific type can interact with light. A substantial difference between conventional and our models is shown for the case of nonlinear transmission/reflection of ultrashort laser pulses by a thin semiconductor film under two-photon generation of biexcitons en_US
dc.language.iso en en_US
dc.publisher Tehnica UTM en_US
dc.subject biexciton en_US
dc.subject bipolariton en_US
dc.subject semiconductor en_US
dc.subject ultrashort laser pulse en_US
dc.title Generalized bipolariton model. Propagation of a ultrashort laser pulse through a thin semiconductor film in the conditions of two-photon generation of biexcitons en_US
dc.type Article en_US


Files in this item

This item appears in the following Collection(s)

Show simple item record

Search DSpace


Advanced Search

Browse

My Account