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Formation and Characterization of Ni Nanostructures in Porous InP - from Crystallites to Wires

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dc.contributor.author GERNGROSS, M.-D.
dc.contributor.author HRKAC, V.
dc.contributor.author KIENLE, L.
dc.contributor.author CARSTENSEN, J.
dc.contributor.author FÖLL, H.
dc.date.accessioned 2019-10-25T08:09:04Z
dc.date.available 2019-10-25T08:09:04Z
dc.date.issued 2013
dc.identifier.citation GERNGROSS, M.-D., HRKAC, V., KIENLE, L. et al. Formation and Characterization of Ni Nanostructures in Porous InP - from Crystallites to Wires. In: ICNBME-2013. International Conference on Nanotechnologies and Biomedical Engineering. German-Moldovan Workshop on Novel Nanomaterials for Electronic, Photonic and Biomedical Applications: proc. of the 2th intern. conf., April 18-20, 2013. Chişinău, 2013, pp. 43-46. ISBN 978-9975-62-343-8. en_US
dc.identifier.isbn 978-9975-62-343-8
dc.identifier.uri http://repository.utm.md/handle/5014/5254
dc.description.abstract In this work the galvanic formation of Ni crystallites and Ni nanowires with very high aspect ratios (>1000:1) in porous InP is presented. By depositing a dielectric interlayer on the InP pore walls it is possible to produce very high aspect ratio Ni nanowires. The coercivity of these nanowires is about 100 Oe (in-plane) and 240 Oe (out-of-plane), while the coercivity of the crystallites lies in between these values. The in-plane remanence squareness of the Ni nanowires is very low (S ≈ 0.08), out-of-plane it is 0.36. For the Ni crystallites the remanence squareness lies in between the range given for the Ni nanowires. en_US
dc.language.iso en en_US
dc.publisher Tehnica UTM en_US
dc.rights Attribution-NonCommercial-NoDerivs 3.0 United States *
dc.rights.uri http://creativecommons.org/licenses/by-nc-nd/3.0/us/ *
dc.subject indium phosphide en_US
dc.subject porous en_US
dc.subject galvanic deposition en_US
dc.subject nickel en_US
dc.title Formation and Characterization of Ni Nanostructures in Porous InP - from Crystallites to Wires en_US
dc.type Article en_US


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