Approximation of  MOSFET Transistor Characteristics in Micro-and  Nanoelectronics

PENIN, Alexandr; SIDORENKO, Anatoli

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dc.contributor.author	PENIN, Alexandr
dc.contributor.author	SIDORENKO, Anatoli
dc.date.accessioned	2019-10-25T08:47:52Z
dc.date.available	2019-10-25T08:47:52Z
dc.date.issued	2011
dc.identifier.citation	PENIN, Alexandr, SIDORENKO, Anatoli. Approximation of MOSFET Transistor Characteristics in Micro-and Nanoelectronics. In: ICNBME-2011. International conference on Nanotechnologies and Biomedical Engineering. German-moldovan workshop on Novel Nanomaterials for Electronic, Photonic and Biomedical Applications: proc. of the intern. conf., July 7-8, 2011. Chişinău, 2011, pp. 215-217. ISBN 978-9975-66-239-0.	en_US
dc.identifier.isbn	978-9975-66-239-0
dc.identifier.uri	http://repository.utm.md/handle/5014/5261
dc.description.abstract	The base approach, giving a wide class of functions convenient for engineering practice for the formal description of I-V characteristics of the MOSFET transistors, is developed. The similarity of I-V characteristics of semiconductor devices and the quasi-resonant converter of voltage is an approach basis. The offered functions have certain physical sense that allows modifying purposefully them for the flexibility of their form.	en_US
dc.language.iso	en	en_US
dc.publisher	Technical University of Moldova	en_US
dc.rights	Attribution-NonCommercial-NoDerivs 3.0 United States	*
dc.rights.uri	http://creativecommons.org/licenses/by-nc-nd/3.0/us/	*
dc.subject	transistors	en_US
dc.subject	nanoelectronics	en_US
dc.subject	microelectronics	en_US
dc.title	Approximation of MOSFET Transistor Characteristics in Micro-and Nanoelectronics	en_US
dc.type	Article	en_US